Samsung Electronics Co., Ltd., the world leader in
advanced semiconductor technology solutions, today announced the
industry’s first production of 20 nanometer (nm) class NAND chips
for use in Secure Digital (SD) memory cards and embedded memory
solutions. Based on this cutting-edge technology, the introduction
of 32 gigabit (Gb) MLC NAND will expand the company’s memory card
solutions for smart phones, high-end IT applications and
high-performance memory cards.
Mr. Soo-In Cho, president, Memory Division, Samsung Electronics,
said "In just one year after initiating 30nm-class NAND
production, Samsung has made available the next generation node
20nm-class NAND, which exceeds most customers requirements for
high-performance, high-density NAND-based solutions." He added,
“The new 20nm-class NAND is not only a significant step forward in
process design, but we have incorporated advanced technologies
into it to enable substantial performance innovation.”
Samsung’s
20nm-class MLC NAND has a 50 percent higher productivity level
than 30nm-class MLC NAND. The write performance of a 20nm-class-based,
eight gigabyte (GB) and higher density, SD card is 30 percent
faster than the 30nm-class NAND and it delivers a speed-class
rating of 10 (read speed of 20MB/s, write speed of 10MB/s). By
applying cutting-edge process, design and controller technology,
Samsung also has secured reliability levels comparable to
30nm-class NAND.
Samsung Electronics first began producing 32Gb
NAND with 30nm-class process technology in March 2009. Now it is
shipping SD card samples to customers, that are built with
20nm-class 32Gb NAND, and will expand production later this year.
Memory cards based in the 20nm-class will be available from 4GB
through 64GB densities.
Samsung’s timely introduction of its
high-performance premium NAND will better support the growing
memory requirements of high-density smartphones, high-end IT
applications and high-performance memory cards.
