Toshiba Launches Highest Density Embedded NAND Flash Memory Devices

Toshiba Corp. and Toshiba America
Electronic Components, Inc. (TAEC), its subsidiary in the Americas,
today announced the launch of a 64 gigabyte(2) (GB) embedded NAND flash
memory module, the highest capacity yet achieved in the industry. The
chip is the flagship device in a line-up of six new embedded NAND flash
memory modules that offer full compliance with the latest e-MMC(TM)(3)
standard, and that are designed for application in a wide range of
digital consumer products, including Smartphones, mobile phones,
netbooks and digital video cameras. Samples of the 64GB module are
available from today, and mass production will start in the first
quarter of 2010.

The new 64GB embedded device
combines sixteen pieces of 32Gbit (equal to 4GB) NAND chips fabricated
with Toshiba’s cutting-edge 32nm process technology, and also
integrates a dedicated controller. Toshiba is the first company to
succeed in combining 16 pieces of 32Gbit NAND chips, and applied
advanced chip thinning and layering technologies to realize individual
chips that are only 30 micrometers thick. Full compliance with the
JEDEC/MMCA Version 4.4(V4.4) standard for embedded MultiMediaCards
supports standard interfacing and simplifies embedding in products,
reducing development burdens on product manufacturers.

Toshiba offers a comprehensive
line-up of single-package embedded NAND Flash memories in densities
ranging from 2GB to 64GB. All integrate a controller to manage basic
control functions for NAND applications, and are compatible with the
latest e-MMC(TM) standard and its new features, including defining multiple storage areas and enhanced security features.

Demand continues to grow for
embedded memories with a controller function that minimizes development
requirements and eases integration into system designs. Toshiba has
established itself as an innovator in this key area. The company was
first to announce a 32GB e-MMC(TM) compliant device, and is now reinforcing its leadership by being first to market with a 64GB generation module.

"The e-MMC(TM) interface has
become the most widely embraced embedded NAND solution with a built-in
controller to simplify integration into system designs. With the
addition of higher density, Ver 4.4 e-MMC(TM) compliant product
offered as single package solutions or as part of a multi-chip module
combined with DRAM, Toshiba can help designers reduce memory subsystem
space requirements," said Scott Beekman, business development manager,
mobile communications memory for TAEC.

Toshiba e-MMC(TM) Ver 4.4
devices are available in a standard configuration with the NAND flash
and built-in controller or in a multi-chip module (MCP) with DRAM or
other memory to reduce the memory subsystem requirement to one chip.
Toshiba MCPs offer multiple memory technologies such as NAND Flash, NOR
Flash, Pseudo SRAM (PSRAM), and low-power SDRAM in a single package to
simplify layout and save valuable board space in increasingly complex,
feature-rich cellular phones.

Product Specifications

Part Number Cap. Package Sample Shipment Mass Production Production Scale

169Ball FBGA

Dec. 2009

1Q, 2010

3 million/ month


169Ball FBGA

Feb. 2010

2Q, 2010


169Ball FBGA

Jan. 2010

1Q, 2010


169Ball FBGA

Mar. 2010

2Q, 2010

Apr. 2010 2Q, 2010

153Ball FBGA

2Q, 2010

2Q, 2010

Key Features

  1. The JEDEC/MMCA V4.4
    compliant interface handles essential functions, including writing
    block management, error correction and driver software. It simplifies
    system development, allowing manufacturers to minimize development
    costs and speed up time to market for new and upgraded products.
  2. A
    wide product line-up supports capacities from 2 to 64GB. The
    high-capacity 64GB embedded devices can record up to 1,070 hours of
    music at a1 28Kbps bit rate, 8.3 hours of full spec high definition
    video(4) and 19.2 hours of standard definition video.
  3. The 64GB
    device stacks sixteen 32Gbit chips fabricated with leading-edge 32nm
    process technology. Application of advanced chip thinning, layering and
    wire bonding technologies allowed Toshiba to achieve individual chips
    only 30 micrometers thick, and to layer and bond them in a small
    package. The result is the highest density embedded NAND flash memory
    module in the industry.
  4. The new chips support the advanced partitioning and security of e-MMC(TM)
    V4.4. Multiple storage areas can be configured, including several
    enhanced memory areas for system files or code, and a multi-level cell
    (MLC) area for data storage. The new 64GB product is sealed in a small
    FBGA package, which is 14mm x 18mm x 1.4mm and has a signal layout
    compliant with JEDEC/MMCA V4.4.
Interface JEDEC/ MMCA V4.4 standard HS-MMC interface
Power Supply Voltage 2.7V to 3.6V (memory core);
1.65V to 1.95V / 2.7V to 3.6V (interface)
Bus width x1, x4, x8
Write Speed5

Target 20MB per sec. (Sequential/Interleave Mode)
Target 9MB per sec. (Sequential/No Interleave Mode) 

Read Speed5

Target 37MB per sec. (Sequential Mode/Interleave Mode)
Target 22MB per sec. (Sequential/No Interleave Mode) 

Temperature range -25degrees to +85degees Celsius
Package 153Ball FBGA (+16 support balls)

* Available only for THGBM2G5D1FBAI9 and THGBM2G4D1FBAI8.


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