Samsung Electronics Co., Ltd., the world leader in advanced memory
technology, announced today that it has developed the industry’s first
32 gigabyte (GB) load-reduced, dual-inline memory module (LRDIMM), for
Samsung will begin mass producing the 32GB LRDIMM in the second half
of this year, giving it the largest family of DRAM offerings in the
Using cutting-edge 40 nanometer-class, four gigabit (4Gb) DDR3
chips, which Samsung introduced earlier this year, the new 32GB LRDIMM
accommodates next generation servers designed for virtualization, cloud
computing and other high-capacity applications.
“In developing the industry’s first load-reduced module with
40nm-class DDR3 technology, we are underscoring our determination to
combine the best of capacity and performance for the newest generation
of servers,” said Dong-Soo Jun, executive vice president, memory
marketing, Semiconductor Business, Samsung Electronics.
Samsung’s 32GB LRDIMM prototype consists of 72 4Gb DDR3 chips and an
additional memory buffer chip to help reduce the load on the memory
subsystem by as much as 75 percent.
By using 32GB LRDIMMs, memory capacity can rise up to 384 gigabytes
per CPU. In a two-way server system, capacity can be increased up to
768GB, or about 1.5 times that of a 512GB server system equipped with
32GB DDR3 RDIMMs.
A server equipped with LRDIMMs can process data at 1,333 megabit per
second (Mbps), approximately 70 percent faster than the previous speed
of 800 Mbps. Samsung’s LRDIMMs operate at 1.35 or 1.5 volts.